creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 v v rms 24 31 35 42 63 70 105 v v dc 35 45 50 60 90 100 150 v i f(av) a i rrm a 0.95 0.92 0.1 5 dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308053 version: j13 storage temperature range - 55 to +150 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle 0.5 0.5 0.3 7.5 voltage rate of change (rated v r ) 10000 typical thermal resistance 3 operating junction temperature range - 55 to +150 maximum reverse current @ rated vr t j =25 t j =125 i r ma 15 10 v 0.63 0.75 0.85 0.57 0.65 0.75 maximum instantaneous forward voltage (note 2) i f =16a, t j =25 i f =16a, t j =125 v f a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a symbol peak repetitive reverse surge current (note 1) 1.0 0.5 maximum dc blocking voltage maximum average forward rectified current 16 peak repetitive forward current (rated vr, square wave, 20khz) i frm 32 to-220ac mbr 16100 mbr 16150 unit maximum repetitive peak reverse voltage maximum rms voltage mounting torque: 5 in-lbs maximum weight: 1.86 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter mbr1635 thru mbr16150 taiwan semiconductor schottk y barrier rectifier features mbr 1635 mbr 1645 mbr 1650 mbr 1660 mbr 1690 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: to-220ac polarity: as marked
part no. part no. mbr1660 mbr1660 mbr1660 (ta=25 unless otherwise noted) document number: ds_d1308053 version: j13 mbr16xx (note 1) prefix "h" c0 suffix "g" to-220ac ratings and characteristics curves mbr1660 c0g c0 g c0 green compound mbr1660hc0 h c0 aec-q101 qualified mbr1635 thru mbr16150 taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing note 1: "xx" defines voltage from 35v (mbr1635) to 150v (mbr16150) example 50 / tube preferred p/n aec-q101 qualified packing code green compound code description mbr1660 c0 0 4 8 12 16 20 0 50 100 150 average forward current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductive load with heatsink 50 100 150 200 250 300 350 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics tj=125 tj=25 mbr1635-mbr1645 mbr1650-mbr16150 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics tj=125 pulse width=300 s 1% duty cycle tj=25 mbr1635-mbr1645 mbr1650-mbr1660 mbr1690-mbr16150
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 0.00 1.60 0.000 0.063 h 13.19 14.79 0.519 0.582 i 4.95 5.20 0.195 0.205 j 4.42 4.76 0.174 0.187 k 1.14 1.40 0.045 0.055 l 5.84 6.86 0.230 0.270 m 2.20 2.80 0.087 0.110 n 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1308053 version: j13 marking diagram mbr1635 thru mbr16150 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical ju nction capacitance f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration. (sec) fig. 6- typical transient thermal characteristics
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1308053 version: j13 mbr1635 thru mbr16150 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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